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宿世臣

宿世臣 副研究员 硕士生导师

宿世臣，男，1979年8月生，黑龙江人，博士研究生、副研究员，硕士生导师

2009年于中科院长春光机所获得理学博士学位。从2004年至今一直从事ZnO，GaN等宽带半导体材料与器件的相关研究工作。利用MBE，PLD和MOCVD等设备开展了ZnO/ZnMgO量子阱，ZnO,ZnMgO薄膜材料和GaN LED的制备，量子点发光与显示器件方面的研究工作，并对材料与器件的物性进行了深入的研究。发表相关论文40余篇，申请专利9项。目前，已经承担国家自然科学基金青年基金、国家自然科学基金面上项目，中国博士后基金，中国博士后基金特别资助项目，广东省公益研究与能力建设资金，广州市对外合作重大专项，教育部博士点基金、广东省创新人才培养计划、深圳大学开放基金等科研项目10余项。

2004.09-2009.07 中科院长春光学机密机械与物理研究所发光
学及应用国家重点实验室，攻读博士
2009.07-至今   365bet线上手机投注教师，
副研究员，从事教学科研工作主讲《材料
物理化学》

1）“ZnO量子阱微腔激子极化激元激光器件的制备及特性研究”，国家自然科学基金

基金号：61205037

2）“新型ZnMgO/GaN异质结型器件的制备及性质研究” 广东省育苗项目基金号：LMY10063

3）“ZnO基微腔器件的制备及特性研究”教育部博士点基金基金号： 20124407120017

4）“大功率GaN LED光效下降问题研究” 中国博士后基金.No. 2013M531862

5）“ZnO/ZnMgO量子阱与金属表面等离子体混合微腔亚波长激光器件特性研究” 国家自然科学基金面上项目 No:61574063

6) “基于量子点的高色域 LED背光模组封装关键技术及产业化研究” 广州市重大对外合作专项

7）“基于ZnO纳米复合材料的甲醛检测新方法”广东省公益研究与能力建设资金

Journal paper

J.wang L.L.Pei S.C.Su Fabrication and Characterization of High Quality ZnO Nanowires/GaN Heterojunction Light Emitting Diode. Nanoscience and Nanotechnology Letters 7, 897–900, 2015
Zilan Wang, S. C. Su, M. Younas, F. C. C. Ling, W. Anwand and A.Wagner. The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition . RSC Adv, 5, 12530-12535 (2015)
M. Younas, L. L. Zou, M. Nadeem, S. C. Su, Z. L. Wang,W. Anwand, A. Wagner, J. H. Hao, C. W. Leung, R. Lortzf and F. C. C.Ling. Impedance analysis of secondary phases in a Co-implanted ZnO single crystal. Phys. Chem. Chem. Phys,16, 16030-16038 (2014)
S. C. Su, H.Y. Zhang, L. Z Zhao, M He and F.C.C.Ling. Band alignment of n-SnO2/p-GaN Hetero-junction studied by x-ray photoelectron spectroscopy. J. Phys. D: Appl. Phys. 47.215102 (2014)
S. C. Su, H. Zhu, L. X. Zhang, M. He, L. Z. Zhao, S. F. Yu, J. N. Wang and F. C. C. Ling, Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure. Applied Physics Letters 103, 131104. (2013)
H. Zhu, S. C. Su, S. F. Yu. Ultraviolet Lasing Characteristics of ZnS Microbelt Lasers. IEEE Journal of Selected Topics In Quantum Electronics 19,1501705(2013)
L. W. Lu, S.C.Su, C. C. Ling, S. J. Xu, D. G. Zhao, J. J. Zhu, H. Yang, J. Wang, W. K. Ge. Conduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique.Applied Physics Express 5,091001 (2012)
C. K. To, B. Yang, S. C. Su, C. C. Ling, C. D. Beling. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering. Journal of Applied Physics. 110, 113521 (2011)
S.C. Su ,X.D.Yang, Y.M.Lu, C.C.Ling. The optical properties of high quality ZnO/ZnMgO quantum well on Si (111) substrate .Solid State Communications 152 311-313 (2012)
S.C.Su, Y.M. Lu,G.Z.Xing,T.Wu .Spontaneous and stimulated emission of ZnO/Zn0.85Mg0.15O asymmetry double quantum wells Superlattices and Microstructures, 48, 485-490（2010）
S.C.Su, Y. M. Lu ,Z. Z. Zhang, C.X.Shan,D. Z. Shen, B. Yao, J.Y. Zhang, and X.W.Fan. Optical properties of ZnMgO nanowalls grown by plasma-assisted molecular beam epitaxy J. Nanosci. Nanotechnol. 10, 1681-1684 (2010)
S.C.Su, Y. M. Lu ,Z. Z. Zhang, C.X.Shan,D. Z. Shen, B. Yao, J.Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan. The optical properties of ZnO/ZnMgO single quantum well grown by P-MBE Applied Surface Science 254, 7303–7305(2008)
S.C.Su, Y. M. Lu ,Z. Z. Zhang, C.X.Shan,D. Z. Shen, B. Yao, J.Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan.Valence band offset of ZnO/Zn_0.85Mg_0.15O heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters 93, 082108 (2008)
Conference paper
S.C.Su, Y. M. Lu ,Z. Z. Zhang, C.X.Shan,D. Z. Shen, B. Yao, J.Y. Zhang, B. H. Li, D. X. Zhao, X. W. Fan.Valence band offset of ZnO/Zn_0.85Mg_0.15O heterojunction measured by x-ray photoelectron spectroscopy. Applied Physics Letters 93, 082108 (2008)
S.C.Su and Francis. C.C. Ling. Post-growth annealing study of heavily Ga-doped ZnO grown by rf magnetron sputtering. Oral, The 13^th conference on lumunescence of China. April 20-24,2013 Nan Jing China
S. C. Su, J. C. Fan, C. C. Ling.Thermal process induced change of conductivity in As-doped ZnO Photonic West 2012, Oral, The International Society for Optics and Photonics, San Francisco, U.S.21-26 Jan 2012, in Proc. SPIE 8263, 82630A (2012).
专利：
宿世臣，吕有明，制备ZnMgO合金薄膜的方法. 授权公告号：CN101235537B
宿世臣，张红艳，赵灵智，何苗.“一种ZnO量子阱微腔结构的激子极化激元激光器件”,申请日期,2014.10.08申请号：201410291731.6（2014）
宿世臣，裴磊磊，赵灵智”一种废旧锂离子电池中 LiFePO4 正极的回收方法” 申请日期，2015.10.12 专利申请号：201510906025.2（2015）